| PART |
Description |
Maker |
| MID150-12A4 MII150-12A4 IXYSCORP-MID150-12A4 |
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
| VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IX |
IGBT Modules: Boost Configurated IGBT Modules
2-WIRE FIELD PROGRAMMABLE W/TIN PLATING
|
IXYS[IXYS Corporation]
|
| VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| APTGT200DA170D3 |
Boost Chopper - IGBT
Boost chopper Trench IGBT Power Module
|
Advanced Power Technology
|
| APTGT25DA120D1 |
Boost Chopper - IGBT
Boost chopper Trench IGBT Power Module
|
Advanced Power Technology
|
| APTGT150DA120D1 |
Boost Chopper - IGBT
Boost chopper Trench IGBT Power Module
|
Advanced Power Technology
|
| FS15R12VT3 |
IGBT-modules
IGBT Modules up to 1200V SixPACK; Package: AG-EASY750-1; IC (max): 15.0 A; VCE(sat) (typ): 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EasyPACK 750;
|
eupec GmbH
Infineon Technologies
|
| SKM100GAL163D SKM200GAL123D SKM400GA123D SKM300GA1 |
SEMITRANS IGBT Modules New Range SEMITRANS IGBT模块的新范围
SEMITRANS IGBT Modules New Range 100 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
